DocumentCode
4808
Title
Process modeling of InAs/AISb materials for high electron mobility transisitors grown by molecular beam epitaxy
Author
Gary S. May استاد راهنما
University
Georgia University Of Technology
Grade
دكتري
Major
Doctor of Philosophy
Number of pages
0
Publish Date
2004
Keyword
Semiconductors-Materials , Electron mobility , Molecular beam epitaxy.
Note
01
Language
انگليسي
Link To Document