رسانايي نوع P در N:SnO2 با استفاده از روش APCVD

We report the N doped SnO2 films with p-type conduction via air pressure chemical vapor deposition technique. Effect of nitrogen doping in different substrate temperatures on samples structure were analyzed by XRD measurement. Shift of peak positions at low and high temperatures toward lower and upper positions indicated substitution of N for O and Sn respectively. Our investigation showed increase of grain size due to substrate temperature and atomic ratio of N/Sn increasing. Changes in thin film morphology were analyzed by FESEM measurement. XPS studying confirmed the presence of nitrogen in the SnO2 film as an acceptor

We report the N doped SnO2 films with p-type conduction via air pressure chemical vapor deposition technique. Effect of nitrogen doping in different substrate temperatures on samples structure were analyzed by XRD measurement. Shift of peak positions at low and high temperatures toward lower and upper positions indicated substitution of N for O and Sn respectively. Our investigation showed increase of grain size due to substrate temperature and atomic ratio of N/Sn increasing. Changes in thin film morphology were analyzed by FESEM measurement. XPS studying confirmed the presence of nitrogen in the SnO2 film as an acceptor