3632

Investigating a Novel Normally-On AlGaN/GaN Capped PHEMT and the Effects of Cap Layers Thickness on its Gate Leakage Current

Alireza Salehi , Hedie Mahmoodnia ,

AlGaN , GaN capped PHEMT , In0.15Ga0.85N layer , spacer layer , Ion , Ioff ratio.

ايران

Tara Ghafouri

AlGaN/GaN capped PHEMT, In0.15Ga0.85N layer, spacer layer, Ion/Ioff ratio.