High-efficiency Polycrystalline CdS/CdTe/InSb/CdTe Solar Cell with Step Doping Grading of Absorber and Back Surface Field layers

In this paper, a novel single-junction polycrystalline cadmium sulfide/cadmium telluride (CdS/CdTe) solar cell by means of the InSb absorber layer between cadmium telluride absorber layers and step doping grading of absorber and back surface field layers has been presented. By inserting the InSb absorber layer and step doping grading of absorber and back surface field layers, the conversion efficiency is increased by about 40% compared with the reference cell because of the built-in electric field and high photogeneration imposed by the the InSb absorber layer and step doping grading of absorber and back surface field layers, respectively. Using calibrated simulations with experimental data of fabricated CdS/CdTe solar cell, the open circuit voltage, short circuit current density, fill factor and conversion efficiency of proposed solar cell structure are 1000 mV, 28.73 mA/cm2, 0.8763 and 25.19% under global AM 1.5 conditions, respectively.