ENGINEERING THE WORK FUNCTION AND ELECTRONIC EMISSION OF HYBRID GRAPHENE-BORON NITRIDE ARMCHAIR NANORIBBON USING B-DOPING

The electronic and chemical properties of B-doped hybrid graphene and boron nitride armchair nanoribbons (N-doped a-GBNNRs) in comparison with graphene armchair nanoribbon (pristine a-GNR) and hybrid graphene and boron nitride armchair nanoribbon (C-3BN) are investigated using the density functional theory method. The results show that all the mentioned nanoribbons are nonmagnetic direct semiconductors and all the B-doped a-GBNNRs are p-type semiconductors. The N-doped graphitic1 and N-doped graphitic2 structures have the lowest work function and the highest number of valence electrons (Lowdin charges) which confirms that they are effective for use in electronic device applications.