پديدآورندگان :
Rasoulzadehzali Aref Aref.rasuolzadehzali@modares.ac.ir Faculty of Electrical and Computer Engineering, Tarbiat Modares University, Tehran 14117-13116, Iran. Aref.rasuolzadehzali@modares.ac.ir, farshi_k@modares.ac.ir, J.rahimi@modares.ac.ir 2Faculty of Engineering, Shahed University, Tehran, Iran , Moravvej-farshi Mohammad Kazem farshi_k@modares.ac.ir Faculty of Electrical and Computer Engineering, Tarbiat Modares University, Tehran 14117-13116, Iran. Aref.rasuolzadehzali@modares.ac.ir, farshi_k@modares.ac.ir, J.rahimi@modares.ac.ir 2Faculty of Engineering, Shahed University, Tehran, Iran , Rahimi Javad J.rahimi@modares.ac.ir Faculty of Electrical and Computer Engineering, Tarbiat Modares University, Tehran 14117-13116, Iran. Aref.rasuolzadehzali@modares.ac.ir, farshi_k@modares.ac.ir, J.rahimi@modares.ac.ir 2Faculty of Engineering, Shahed University, Tehran, Iran , Yavari Mohammad Hassan mh.yavari@shahed.ac.ir Faculty of Engineering, Shahed University, Tehran, Iran
كليدواژه :
component , Delay differential equation model (DDE) , Finite difference travelling wave model (FDTW) , saturable absorber (SA) , quantum dot mode , locked laser.
چكيده فارسي :
Using models based on delay differential equation (DDE) and finite difference traveling wave (FDTW), we have obtained the characteristics of passively quantum dot modelocked lasers (QD-MLLs). By manipulating DDE, it is shown that by an increase in the saturable absorber’s (SA) reverse bias, the pulse width decreases while the stability of the pulse time domain response decreases. Besides, the range of enhancement factor to have a stable pulse decreases as well. Moreover, DDE model shows that by controlling unsaturated gain and loss ratio harmonic mode locking is achievable. Finally, FDTW model is used to investigate the spatio-temporal features of QD-MLLs. Although this method substantially increases the simulation complexity due to the complex rate equations alongside with two dimensional simulation grid, it provides a more comprehensive simulation tool for analysing the device.
