پديدآورندگان :
KhademHosseini Vahideh Department of Electrical Engineering, Pardis of Urmia University, Urmia, Iran , Ahmadi Mohammad Taghi Department of Electrical Engineering, Pardis of Urmia University, Urmia, Iran-Nanotechnology Research Center, Nano electronic Research Group, Physics Department, Urmia University, Urmia, Iran-Faculty of Electrical Engineering, Universiti Teknologi Malaysia, 81310, UTM Johor Bahru, Johor, Malaysia , Afrang Saeid Department of Electrical Engineering, Pardis of Urmia University, Urmia, Iran-Department of Electrical Engineering, Urmia University, Urmia, Iran , Ismail Razali Faculty of Electrical Engineering, Universiti Teknologi Malaysia, 81310, UTM Johor Bahru, Johor, Malaysia , Meshkin ghalam Bahar Nanotechnology Research Center, Nano electronic Research Group, Physics Department, Urmia University, Urmia, Iran
چكيده فارسي :
Single electron transistor (SET) as a nano device has unique properties such as high speed operation and low
energy conception. This device operates based on coulomb blockade which prevents electron transfer between
coulomb barriers in some conditions, so current of fullerene SET is investigated in this research. The current
of SET is modeled and compared with experimental data. Moreover fullerene SET is simulated with ATK
software.
