شماره ركورد كنفرانس :
4415
عنوان مقاله :
Raman and IR characterization of nanocrystalline Indium Oxide for optoelectronics applications
عنوان به زبان ديگر :
Raman and IR characterization of nanocrystalline Indium Oxide for optoelectronics applications
پديدآورندگان :
Amirhoseiny Maryam Amirhoseiny_m@bzte.ac.ir Buein Zahra Technical University,
كليدواژه :
Nanocrystalline In2O3 , Si substrates , FTIR , micro , Raman spectroscopy
عنوان كنفرانس :
نخستين كنفرانس ملي تحقيقات بين رشته اي در مهندسي كامپيوتر، برق، مكانيك و مكاترونيك
چكيده فارسي :
Nanocrystalline cubic In2O3 thin films were successfully synthesized by thermal evaporation of Indium on unheated Si substrates, followed by thermal wet oxidation. The synthesized products were characterized by X-ray diffraction (XRD), Fourier transform infrared (FTIR) spectroscopy, micro-Raman spectroscopy. XRD patterns confirmed the crystalline nature and cubic structure of synthesized composition. Crystallite size and strain were evaluated from the XRD data. The vibrational modes of the samples were investigated by Raman spectrum. The effects of strain and crystalline size of In2O3 were studied by FTIR and Raman shifts.
چكيده لاتين :
Nanocrystalline cubic In2O3 thin films were successfully synthesized by thermal evaporation of Indium on unheated Si substrates, followed by thermal wet oxidation. The synthesized products were characterized by X-ray diffraction (XRD), Fourier transform infrared (FTIR) spectroscopy, micro-Raman spectroscopy. XRD patterns confirmed the crystalline nature and cubic structure of synthesized composition. Crystallite size and strain were evaluated from the XRD data. The vibrational modes of the samples were investigated by Raman spectrum. The effects of strain and crystalline size of In2O3 were studied by FTIR and Raman shifts.
