سنتز لايه نازك نيتريد مس به وسيله دستگاه پلاسماي كانوني كم انرژي

Synthesis of copper nitride thin films using a low energy dense plasma focus device

Cu3N thin films were deposited on silicon and glass substrates using a low energy (1.5 kJ) plasma focus device.Cu3N thin film samples were deposited using 10, 20 and 30 shots at 7 and 8 cm from top of the anode with argon (2.7 mbar) and nitrogen (0.3 mbar) as filling gases. The deposited samples were analyzed by XRD and UVVIS. XRD results exhibited the diffraction peaks related to Cu3N and CuO. The optical band gap of the films ranges from 0.88 to 1.31 eV. Moreover, the optical band gap the films increases of the number of shots.