شماره ركورد كنفرانس :
5041
عنوان مقاله :
The role of hydrogen pressure during annealing stage on the graphene nucleation density in LPCVD process
Author/Authors :
M. Mirzaei School of Chemical Engineering - Faculty of Engineering - Tarbiat Modares University, Tehran, Iran , S. M. Hedayat School of Chemical Engineering - Faculty of Engineering - University of Tehran, Tehran, Iran , J. Karimi-Sabet Material and Nuclear Fuel Research School - Nuclear Science and Technology Research Institute, Tehran, Iran , J. Towfighi-Daryan School of Chemical Engineering - Faculty of Engineering - Tarbiat Modares University, Tehran, Iran
كليدواژه :
hydrogen pressure , graphene , CVD , annealing , nucleation
عنوان كنفرانس :
The 10th International Chemical Engineering Congress & Exhibition (IChEC 2018)
چكيده فارسي :
فاقد چكيده فارسي
چكيده لاتين :
In this study we have investigated the effect of hydrogen partial pressure during annealing step on the morphology of copper foil and then graphene nucleation density in chemical vapor deposition (CVD) process. Morphology of annealed copper samples including grains size and roughness were characterized using Optical Microscopy (OM) and Atomic Force Microscopy (AFM). The grown graphene nucleuses were also analyzed using OM. We found that hydrogen partial pressure increment from 0.266mbar to 4mbar leads to roughness variation from18.65nm to 24.86nm, whereas according to statistical analysis there is no significant difference between them. The other hand, as hydrogen pressure increased, the amount of adsorbed dissociated hydrogen molecules on copper active sites raised and consequently promoted the graphene nucleation density.
