Author/Authors :
Rahmane, Saâd Université de Biskra - Laboratoire de Physique des Couches Minces et Applications, Algérie , Djouadi, Mohamed Abdou Université de Nantes - Institut des Matériaux Jean Rouxel IMN UMR 6502, France , Aida, Mohamed Salah Université Mentouri - Laboratoire des Couches minces et Interfaces, Algérie
Title Of Article :
THE EFFECT OF ANNEALING ON THE PROPERTIES OF ZNO:AL FILMS GROWN BY RF MAGNETRON SPUTTERING
Abstract :
The effect of annealing temperature ranged from 200 to 600 °C on the structural, optical and electrical properties of aluminum doped zinc oxide (ZnO:Al) films was reported. The thin films were deposited on glass and silicon substrates by rf magnetron sputtering method using ZnO target (diameter 7,5 cm) mixed with 2 wt.% Al_2O_3. It has been found that the crystal structure of ZnO:Al films is hexagonal with c-axis preferential orientation. With an increase in the annealing temperature the intrinsic compressive stress was found to decrease, and near stress-free film was obtained after annealing at 600 °C. A resistivity of 1.25x10^-3 Ωcm and an average transmittance above 90 % in visible range were obtained for films prepared at room temperature.
NaturalLanguageKeyword :
magnetron sputtering , Al doped ZnO , annealing temperature , properties
JournalTitle :
Courrier Du Savoir
