Author/Authors :
TERGHINI, W. Université de Biskra - Laboratoire des Matériaux Métalliques et Semiconductrices, Algérie , SAADOUNE, A. Université de Biskra - Laboratoire des Matériaux Métalliques et Semiconductrices, Algérie , DEHIMI, L. University of Batna - Faculty of Science, Algeria , MEGHERBI, M.L. Université de Biskra - Laboratoire des Matériaux Métalliques et Semiconductrices, Algérie , ÖZÇELIKC, S. Gazi University - Faculty of Arts and Sciences - Department of Physics, Turkey
Abstract :
In this work, we report measured forward current voltage characteristics of AuGeNi/p-Si schottky barrier diode in the
temperature range of 295-400 °K. Forward current voltage characteristics were investigated. This investigation is based on the
analysis of the dependency of extracted parameters such as ideality factor (η), barrier height ( ) and saturation current ( )
on temperature. The Richardson coefficient was examined by means of the saturation versus temperature. While η decreases,
ØB0 increases with increasing temperature. Obtained Richardson constant value of the A*=11.5 x10-7Acm-2K-2 is very low
compared to the standard value. The modified Richardson plot has given mean barrier height and Richardson constant
(A*) as 1.15 eV and 30.53 Am-2K-2, respectively. The temperature dependence of the I–V characteristics of the AuGeNi/p-Si
Schottky diode have been successfully explained on the basis of thermionic emission (TE) mechanism with Gaussian
distribution of the Schottky barrier heights (SBHs).
NaturalLanguageKeyword :
Schottky contacts , current , voltage , temperature characteristics , Gaussian distribution , Barrier inhomogeneity
