Author/Authors :
laznek, samira university of biskra - laboratory of semiconducting and metallic materials (lmsm), Biskra, Algeria , meftah, afek university of biskra - laboratory of semiconducting and metallic materials (lmsm), Biskra, Algeria , meftah, amjad university of biskra - laboratory of semiconducting and metallic materials (lmsm), Biskra, Algeria , sengouga, nourddine university of biskra - laboratory of semiconducting and metallic materials (lmsm), Biskra, Algeria
Abstract :
This paper deals with a AlGaAs/GaAs p-i-n quantum well solar cell. The doped region are based on AlGaAs semiconductor while the intrinsic region i contain multi quantum well (MQW) system AlGaAs/GaAs. A numerical method is developed to determine the influence of insertion of MQW into the depletion region over the p-i(MQW)-n AlxGa1-xAs solar cells. Current–voltage (J-V) characteristics is generated for the AM1.5 solar spectrum. The effect of the Aluminum molar fraction x (AlxGa1-xAs), the number, the width, the depth of the wells and barriers in the i layer and the doping densities on the electrical outputs and the quantum efficiency of the solar cell are also presented. The optimized solar cell reached a conversion efficiency of 28.72 % with a short circuit current density of 36.9 mA/cm2 and an open circuit voltage of 0.97 V.
NaturalLanguageKeyword :
Quantum well , Solar cell , AlGaAs , Conversion efficiency , Modeling
