DocumentCode
1000044
Title
Absolute movement of energy levels in junctions formed by dissimilar materials
Author
Dronavalli, Smitha ; Jindal, Renuka P.
Author_Institution
W. H. Hall Dept. of Electr. & Comput. Eng., Univ. of Lousiana, Lafayette, LA, USA
Volume
26
Issue
8
fYear
2005
Firstpage
524
Lastpage
526
Abstract
We propose a method to determine the absolute location of energy levels when electrical contact is made between two dissimilar materials. The conventional method of determining the energy levels is correct only as a limiting case when the number of electrons in one sample greatly exceed that in the other.
Keywords
Fermi level; interface states; ohmic contacts; semiconductor heterojunctions; absolute location; absolute movement; dissimilar materials; electrical contact; energy levels; energy-level placement; global vacuum level; heterojunction; homojunction; local vacuum level; parallel-plate capacitor; quasi-Fermi level; Batteries; Capacitors; Charge carrier processes; Conducting materials; Contacts; Electrons; Energy states; H infinity control; Heterojunctions; Steady-state; Energy-level placement; global vacuum level; heterojunction; homojunction; local vacuum level;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/LED.2005.852521
Filename
1468210
Link To Document