Quantum-well infrared phototransistor with pHEMT structure

Author

Joon Ho Oum ; Uk Hyun Lee ; Yong Hoon Kang ; Jong Ryul Yang ; Songcheol Hong

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Korea Adv. Inst. of Sci. & Technol., Daejeon, South Korea

Volume

26

Issue

8

fYear

2005

Firstpage

527

Lastpage

529

Abstract

A quantum-well infrared phototransistor with a pseudomorphic high-electron mobility transistor (pHEMT) structure is presented. The proposed phototransistor uses four periods of a GaAs/Al/sub 0.3/Ga/sub 0.7/As (50 /spl Aring//120 /spl Aring/) quantum-well absorption region, as well as an In/sub 0.15/Ga/sub 0.85/As quantum well conducting channel under the absorption layer. The phototransistor shows a large responsivity of 140 A/W around 6 μm at 23 K (for a cutoff wavelength of 7.5 μm). The relation between the photoconductive gain and the transconductance of the pHEMT structure is also investigated.

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; infrared detectors; photodetectors; phototransistors; quantum well devices; 120 /spl Aring/; 23 K; 50 /spl Aring/; 7.5 micron; GaAs-Al/sub 0.3/Ga/sub 0.7/As- In/sub 0.15/Ga/sub 0.85/As; MODFET; infrared detectors; pHEMT structure; photoconductive gain; pseudomorphic high-electron mobility transistor; quantum well conducting channel; quantum-well absorption region; quantum-well devices; quantum-well infrared photodetectors; quantum-well infrared phototransistor; transconductance property; Electromagnetic wave absorption; Infrared detectors; PHEMTs; Photoconductivity; Photodetectors; Phototransistors; Quantum dots; Quantum wells; Switches; Switching circuits; Infrared (IR) detectors; MODFETs; quantum-well (QW) devices; quantum-well infrared photodetectors (QWIPs);

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2005.852539

Filename

1468211