• DocumentCode
    1000144
  • Title

    InP epitaxy with a new metalorganic compound

  • Author

    Renz, H. ; Weidlein, J. ; Benz, K.W. ; Pilkuhn, M.H.

  • Author_Institution
    Universitÿt Stuttgart, Institut fÿr Anorganische Chemie, Stuttgart, West Germany
  • Volume
    16
  • Issue
    6
  • fYear
    1980
  • Firstpage
    228
  • Abstract
    A new metal-organic compound, a trimethyl-indium trimethyl-phosphine adduct has been used for the growth of InP epitaxial layers. The formation of unwanted polymer products during epitaxial growth could be avoided in this way. Epitaxial layers of good quality (ND ¿ NA¿1016¿1017 cm¿3 were grown at a rate of 0.8 ¿m/h.
  • Keywords
    III-V semiconductors; indium compounds; organometallic compounds; semiconductor growth; vapour phase epitaxial growth; (CH3)3In-P(CH3)3; CVD; InP epitaxy; VPE; advantages; growth rate 0.8 micron/h; metalorganic compound; trimethyl indium trimethyl phosphine adduct;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19800163
  • Filename
    4249608
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1000144