Title :
A simple Flash memory cell model for transient circuit simulation
Author :
Kang, Yong Hoon ; Hong, Songcheol
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Korea Adv. Inst. of Sci. & Technol., Daejeon, South Korea
Abstract :
A simple Flash memory cell model for circuit simulation is presented. The proposed model gives an excellent fitting of dc and transient data and does not require additional simulation time comparing with that of a MOSFET transistor. Effective control-gate voltage method and ideal current-mirror technique are introduced to calculate floating-gate voltage. These allow macro modeling of a Flash memory cell in a circuit simulator.
Keywords :
circuit simulation; current mirrors; flash memories; integrated circuit modelling; integrated memory circuits; Flash memory cell model; control-gate voltage method; floating-gate voltage; ideal current-mirror technique; integrated circuit modeling; integrated memory circuits; macro modeling; transient circuit simulation; Capacitors; Character generation; Circuit simulation; Electrocardiography; Flash memory cells; MOSFET circuits; Nonvolatile memory; Parameter extraction; Threshold voltage; Voltage control; Erase; Flash EEPROM; Flash memory; Flash model; macro model; program;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2005.852525
