DocumentCode
1000197
Title
A simple Flash memory cell model for transient circuit simulation
Author
Kang, Yong Hoon ; Hong, Songcheol
Author_Institution
Dept. of Electr. Eng. & Comput. Sci., Korea Adv. Inst. of Sci. & Technol., Daejeon, South Korea
Volume
26
Issue
8
fYear
2005
Firstpage
563
Lastpage
565
Abstract
A simple Flash memory cell model for circuit simulation is presented. The proposed model gives an excellent fitting of dc and transient data and does not require additional simulation time comparing with that of a MOSFET transistor. Effective control-gate voltage method and ideal current-mirror technique are introduced to calculate floating-gate voltage. These allow macro modeling of a Flash memory cell in a circuit simulator.
Keywords
circuit simulation; current mirrors; flash memories; integrated circuit modelling; integrated memory circuits; Flash memory cell model; control-gate voltage method; floating-gate voltage; ideal current-mirror technique; integrated circuit modeling; integrated memory circuits; macro modeling; transient circuit simulation; Capacitors; Character generation; Circuit simulation; Electrocardiography; Flash memory cells; MOSFET circuits; Nonvolatile memory; Parameter extraction; Threshold voltage; Voltage control; Erase; Flash EEPROM; Flash memory; Flash model; macro model; program;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/LED.2005.852525
Filename
1468223
Link To Document