Title :
A novel P-channel nitride-trapping nonvolatile memory device with excellent reliability properties
Author :
Lue, Hang-Ting ; Hsieh, Kuang-Yeu ; Liu, Rich ; Lu, Chih-Yuan
Author_Institution :
Emerging Central Lab., Macronix Int. Co., Hsinchu, Taiwan
Abstract :
A novel P-channel nitride trapping nonvolatile memory device is studied. The device uses a P+-poly gate to reduce gate injection during channel erase, and a relatively thick tunnel oxide (>5 nm) to prevent charge loss. The programming is carried out by low-power band-to-band tunneling induced hot-electron (BTBTHE) injection. For the erase, self-convergent channel erase is used to expel the electrons out of nitride. Experimental results show that this p-channel device is immune to read disturb due to the large potential barrier for hole tunneling. Excellent P/E cycling endurance and retention properties are demonstrated. This p-channel device shows potential for high-density NAND-type array application with high-programming throughput (>10 Mb/sec).
Keywords :
MOS integrated circuits; hot carriers; integrated memory circuits; low-power electronics; read-only storage; semiconductor device reliability; tunnelling; BTBTHE; NAND array; NROM; P+-poly gate; SONOS; charge loss; gate injection; hole tunneling; low-power band-to-band tunneling induced hot-electron injection; nitride trapping; nonvolatile memory device; p-channel device; potential barrier; reliability properties; self-convergent channel erase; tunnel oxide; Current measurement; Dielectric devices; Fabrication; Hot carriers; MOS devices; Nonvolatile memory; SONOS devices; Secondary generated hot electron injection; Throughput; Tunneling; Band-to-band tunneling induced hot-electron (BTBTHE); NROM; SONOS; nitride trapping;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2005.852742
