Title :
Lateral pnp GaAs bipolar transistor prepared by ion implantation
Author :
Kr¿¿utle, H. ; Narozny, P. ; Beneking, H.
Author_Institution :
Aachen Technical University, Institute of Semiconductor Electronics, Aachen, West Germany
Abstract :
A lateral pnp bipolar transistor structure has been realised in n-GaAs material using ion implantation. Be ions have been implanted to form the emitter and collector. Proton implantation has been used to reduce the area of the parasitic emitter-substrate diode. First results of a transistor with a current gain of 0.5 are shown.
Keywords :
III-V semiconductors; bipolar transistors; gallium arsenide; ion implantation; Be ion implantation; GaAs bipolar transistor; ion implantation; lateral p-n-p bipolar transistor; parasitic emitter-substrate diode; proton implantation;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19820178
