• DocumentCode
    1000481
  • Title

    A novel method to characterize parasitic capacitances in MOSFET´s

  • Author

    Ricco, B. ; Versari, R. ; Esseni, D.

  • Author_Institution
    Dept. of Electron., Bologna Univ., Italy
  • Volume
    16
  • Issue
    11
  • fYear
    1995
  • Firstpage
    485
  • Lastpage
    487
  • Abstract
    A new technique exploiting the body effect is presented to separate intrinsic from extrinsic capacitances in submicron MOSFET´s. The method has been validated using 2D numerical simulations and results obtained with transistors fabricated with 0.7 μm CMOS technology are presented.
  • Keywords
    MOSFET; capacitance; capacitance measurement; semiconductor device testing; 0.7 micron; 2D numerical simulations; CMOS technology; body effect; capacitance characterisation; parasitic capacitances; submicron MOSFET; CMOS technology; Capacitance measurement; Geometry; MOSFET circuits; Numerical simulation; Parasitic capacitance; Particle measurements; Semiconductor device modeling; Senior members; Solid modeling;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/55.468275
  • Filename
    468275
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1000481