DocumentCode :
1000535
Title :
Analysis of the cryogenic continuous film memory
Author :
Edwards, H.H. ; Newhouse, V.L.
Author_Institution :
Rensselaer Polytechnic Institute, Troy, NY, USA
Volume :
1
Issue :
4
fYear :
1965
fDate :
12/1/1965 12:00:00 AM
Firstpage :
369
Lastpage :
378
Abstract :
It is shown that the experimental switching behavior of CFM cells with orthogonal drive lines can be quantitatively explained by a three-parameter persistatron-type model. This model is used to calculate the various cell operating limits and to prove that cell drive current operating range can never exceed 
of the optimum value. Maximizing this range is found to require operation in a mode in which some degree of information degradation by disturb currents occurs. The CFM cell disturb characteristics are shown to favor word-organized over bit-organized operation.
of the optimum value. Maximizing this range is found to require operation in a mode in which some degree of information degradation by disturb currents occurs. The CFM cell disturb characteristics are shown to favor word-organized over bit-organized operation.Keywords :
Magnetic film memories; Superconducting memories; Cryogenics; Degradation; Heating; Magnetic fields; Magnetostatics; Predictive models; Superconducting films; Superconductivity; Temperature distribution; Tin;
fLanguage :
English
Journal_Title :
Magnetics, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9464
Type :
jour
DOI :
10.1109/TMAG.1965.1062957
Filename :
1062957
Link To Document :
