• DocumentCode
    1000574
  • Title

    Superior low-pressure-oxidized Si3N4 films on rapid-thermal-nitrided poly-Si for high-density DRAM´s

  • Author

    Cheng, H.C. ; Liu, H.W. ; Su, H.P. ; Hong, G.

  • Author_Institution
    Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
  • Volume
    16
  • Issue
    11
  • fYear
    1995
  • Firstpage
    509
  • Lastpage
    511
  • Abstract
    High-performance stacked storage capacitors with small effective-oxide-thickness (t/sub ox,eff/) as thin as 37 /spl Aring/ has been achieved using low-pressure-oxidized nitride films deposited on NH/sub 3/-nitrided poly-Si electrodes. The capacitors exhibit excellent leakage property and time-dependent dielectric-breakdown (TDDB) characteristics. Furthermore, this technique is promising for the 64- and 256-Mb dynamic-random-access-memory (DRAM) applications because the process temperatures never exceed 850/spl deg/C.<>
  • Keywords
    DRAM chips; capacitors; elemental semiconductors; nitridation; rapid thermal processing; silicon; silicon compounds; 37 angstrom; 64 to 256 Mbit; 850 degC; NH/sub 3/; Si/sub 3/N/sub 4/-Si; effective oxide thickness; high-density DRAMs; leakage property; process temperatures; rapid thermal nitridation; stacked storage capacitors; time-dependent dielectric-breakdown; Capacitance; Capacitors; Dielectric substrates; Electrodes; Leakage current; Oxidation; Random access memory; Semiconductor films; Temperature; Thermal stresses;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/55.468283
  • Filename
    468283
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1000574