Title :
Superior low-pressure-oxidized Si3N4 films on rapid-thermal-nitrided poly-Si for high-density DRAM´s
Author :
Cheng, H.C. ; Liu, H.W. ; Su, H.P. ; Hong, G.
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Abstract :
High-performance stacked storage capacitors with small effective-oxide-thickness (t/sub ox,eff/) as thin as 37 /spl Aring/ has been achieved using low-pressure-oxidized nitride films deposited on NH/sub 3/-nitrided poly-Si electrodes. The capacitors exhibit excellent leakage property and time-dependent dielectric-breakdown (TDDB) characteristics. Furthermore, this technique is promising for the 64- and 256-Mb dynamic-random-access-memory (DRAM) applications because the process temperatures never exceed 850/spl deg/C.<>
Keywords :
DRAM chips; capacitors; elemental semiconductors; nitridation; rapid thermal processing; silicon; silicon compounds; 37 angstrom; 64 to 256 Mbit; 850 degC; NH/sub 3/; Si/sub 3/N/sub 4/-Si; effective oxide thickness; high-density DRAMs; leakage property; process temperatures; rapid thermal nitridation; stacked storage capacitors; time-dependent dielectric-breakdown; Capacitance; Capacitors; Dielectric substrates; Electrodes; Leakage current; Oxidation; Random access memory; Semiconductor films; Temperature; Thermal stresses;
Journal_Title :
Electron Device Letters, IEEE
