• DocumentCode
    1000702
  • Title

    Mobility calculation of two-dimensional electron gas in GaAs/AlGaAs heterostructure at 4.2 K

  • Author

    Takeda, Y. ; Kamei, H. ; Sasaki, A.

  • Author_Institution
    Kyoto University, Department of Electrical Engineering, Kyoto, Japan
  • Volume
    18
  • Issue
    7
  • fYear
    1982
  • Firstpage
    309
  • Lastpage
    311
  • Abstract
    Electron concentration and undoped AlGaAs spacer thickness dependencies of the mobility of a two-dimensional electron gas in a GaAs/AlGaAs single heterostructure are calculated at 4.2 K. The results predict extremely high electron mobility in this structure and agree quite well with very recent experimental data.
  • Keywords
    III-V semiconductors; aluminium compounds; carrier mobility; electron gas; gallium arsenide; p-n heterojunctions; 4.2 K; GaAs-AlGaAs heterostructure; electron mobility; mobility; two-dimensional electron gas;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19820211
  • Filename
    4249669
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1000702