DocumentCode :
1000871
Title :
A novel method of fabricating integrated FETs for MEMS applications
Author :
Draper, Bruce L. ; Okandan, Murat ; Mani, Seethambal S. ; Bennett, R.S.
Author_Institution :
Sandia Nat. Labs., Albuquerque, NM, USA
Volume :
13
Issue :
3
fYear :
2004
fDate :
6/1/2004 12:00:00 AM
Firstpage :
500
Lastpage :
504
Abstract :
This paper demonstrates a simple technique for building n-channel MOSFETs and complex micromechanical systems simultaneously instead of serially, allowing a more straightforward integration of complete systems. The fabrication sequence uses few additional process steps and only one additional masking layer compared to a MEMS-only technology. The process flow forms the MOSFET gate electrode using the first level of mechanical polycrystalline silicon, while the MOSFET source and drain regions are formed by dopant diffusions into the substrate from subsequent levels of heavily doped poly that is used for mechanical elements. The process yields devices with good, repeatable electrical characteristics suitable for a wide range of digital and analog applications.
Keywords :
MOSFET; field effect transistors; micromechanical devices; microsensors; MEMS applications; MOSFET drain; MOSFET gate electrode; MOSFET source; analog applications; digital applications; dopant diffusions; electrical characteristics; field-effect transistors; integrated FET fabrication; masking layer; mechanical elements; mechanical polycrystalline silicon; micromechanical systems; microsensors; n-channel MOSFET; Circuits; Electrodes; FETs; Fabrication; MOSFETs; Microelectromechanical devices; Microelectronics; Micromechanical devices; Parasitic capacitance; Silicon; FETs; Field-effect transistors; microelectromechanical devices; microsensors;
fLanguage :
English
Journal_Title :
Microelectromechanical Systems, Journal of
Publisher :
ieee
ISSN :
1057-7157
Type :
jour
DOI :
10.1109/JMEMS.2004.828735
Filename :
1303628
Link To Document :
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