A radiation hard frequency reference IC

Author

Redman-White, W. ; Dunn, T.R. ; Lucas, D.R. ; Smithers, P.A. ; Winchcombe, S.A.

Author_Institution

Dept. of Electron. & Comput. Sci., Southampton Univ., UK

Volume

35

Issue

6

fYear

1988

fDate

12/1/1988 12:00:00 AM

Firstpage

1368

Lastpage

1371

Abstract

A high-stability radiation-hard crystal oscillator/divider fabricated in silicon-on-sapphire technology is described. Many analog functions are implemented in the chip, and an AGC system is used to reduce the influence of transistor parameter variations. Methods for obtaining radiation hardness by circuit design are discussed, and the particular problems associated with realizing analog circuits in SOS are addressed

Keywords

analogue circuits; automatic gain control; crystal resonators; digital integrated circuits; field effect integrated circuits; frequency stability; integrated circuit technology; oscillators; quartz; radiation hardening (electronics); reference circuits; semiconductor technology; semiconductor-insulator boundaries; AGC system; SOS; Si-Al₂O₃; SiO₂ crystals; analog circuits; circuit design; high-stability; radiation hard frequency reference IC; radiation hardened electronics; radiation hardness; radiation-hard crystal oscillator/divider; silicon-on-sapphire technology; Capacitors; Circuit stability; Circuit synthesis; Degradation; Frequency conversion; Oscillators; Silicon; Space technology; Voltage; Winches;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.25466

Filename

25466