Interface-state measurement on SOS using the charge-pumping technique on gated-diode test structures

Author

Dejenfelt, Anders T.

Author_Institution

Dept. of Solid State Electron., Chalmers Univ. of Technol., Goteborg, Sweden

Volume

35

Issue

6

fYear

1988

fDate

12/1/1988 12:00:00 AM

Firstpage

1379

Lastpage

1384

Abstract

The radiation-induced interface-state density in CMOS/SOS was measured with the charge-pumping technique using a gated-diode test structure. The results were compared to the interface-state density measured with the subthreshold slope method in n- and p- channel MOSFET devices after exposure to Co-60 radiation. Experimental results using the two methods on both depleted and nondepleted SOS-substrates were analyzed. With a combination of both methods, the interface-state density at the Si-sapphire interface was 1.3×10¹² cm ^-2 eV^-1. A direct method of measuring the interface-state density at the interface to the substrate isolation oxide using a charge-pumping technique is described. The test structures can be implemented in a standard CMOS/SOS test die

Keywords

CMOS integrated circuits; insulated gate field effect transistors; integrated circuit technology; radiation hardening (electronics); semiconductor technology; semiconductor-insulator boundaries; ⁶⁰Co radiation; CMOS/SOS; Co-60 radiation; MOSFET devices; Si-Al₂O₃; charge-pumping technique; gated-diode test structures; interface-state density measured; interface-state measurement; radiation hardened electronics; radiation-induced interface-state density; subthreshold slope method; test die; CMOS technology; Charge pumps; Current measurement; Density measurement; Grain boundaries; Isolation technology; MOSFETs; Silicon on insulator technology; Substrates; Testing;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.25468

Filename

25468