Title :
Theoretical studies of electronic conduction and optical generation mechanisms in the double-heterostructure optoelectronic switch (DOES)
Author :
Simmonds, J.G. ; Taylor, Geoffrey W.
Author_Institution :
Dept. of Electr. Eng., Bradford Univ., UK
fDate :
8/1/1988 12:00:00 AM
Abstract :
The effects of other physical properties on the electrical and optical properties of the double-heterostructure optoelectronic switch device are calculated. The device is similar to an earlier version, but the charge sheet responsible for the unique electrical and optical switching properties of the device is placed in the wide-bandgap barrier layer rather than in the narrow-bandgap active layer. This generally improves the overall operating characteristics of the device because in principle it allows higher charge sheet doping values. This is possible because the charge sheet remains ionized even for very high inversion channel densities
Keywords :
integrated optoelectronics; optoelectronic devices; semiconductor device models; semiconductor switches; (DOES); charge sheet; double-heterostructure optoelectronic switch; electrical switching properties; electronic conduction; high inversion channel densities; higher charge sheet doping values; operating characteristics; optical generation mechanisms; optical properties; optical switching properties; physical properties; wide-bandgap barrier layer; Charge carrier processes; Current density; Doping; Heterojunctions; Mechanical factors; Optical devices; Optical switches; P-n junctions; Spontaneous emission; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
