Title :
Computer simulation of ionizing radiation burnout in power MOSFETs
Author :
Keshavarz, A.A. ; Fischer, T.A. ; Dawes, W.R., Jr. ; Hawkins, C.F.
Author_Institution :
Dept. of Electr. & Comput. Eng., New Mexico Univ., Albuquerque, NM, USA
fDate :
12/1/1988 12:00:00 AM
Abstract :
The first computer simulation of the ionizing-radiation-induced burnout in power MOSFETs is reported. The modeling results support a current-induced avalanche burnout mechanism at the interface of the epitaxial layer and the substrate coupled with parasitic bipolar transistor action, leading to secondary breakdown and thermal runaway. The simulations allow an evaluation of the effects of semiconductor parameters, device geometry, doping profiles, and bias voltage on the burnout dose-rate threshold. The model provides a method for optimizing the radiation hardness of power MOSFETs
Keywords :
insulated gate field effect transistors; power transistors; radiation hardening (electronics); semiconductor device models; semiconductor epitaxial layers; semiconductor technology; semiconductor-insulator boundaries; Si-SiO2; bias voltage; burnout dose-rate threshold; computer simulation; current-induced avalanche burnout mechanism; device geometry; doping profiles; effects of semiconductor parameters; ionizing radiation burnout; ionizing-radiation-induced burnout; model; modeling; parasitic bipolar transistor action; power MOSFETs; radiation hardened electronics; radiation hardness optimisation; secondary breakdown; thermal runaway; Avalanche breakdown; Bipolar transistors; Computational modeling; Computer simulation; Epitaxial layers; Ionizing radiation; MOSFETs; Semiconductor process modeling; Solid modeling; Substrates;
Journal_Title :
Nuclear Science, IEEE Transactions on
