• DocumentCode
    1001295
  • Title

    Influence of growth conditions on deep levels in molecular-beam-epitaxial GaAs

  • Author

    Amano, C. ; Shibukawa, Atsushi ; Ando, K. ; Yamaguchi, Masaki

  • Author_Institution
    NTT Ibaraki Electrical Communication Laboratory, Tokai, Japan
  • Volume
    20
  • Issue
    4
  • fYear
    1984
  • Firstpage
    174
  • Lastpage
    175
  • Abstract
    Molecular-bearn-epitaxially grown undoped GaAs layers are studied with regard to the relation between growth conditions and deep-level trap generation. Both carrier concentration and electron trap density have a minimum value in samples grown at close to the minimum As/Ga flux ratio under As-stabilised conditions. Growth under these conditions leads to suppression of defect generation and unintentional impurity incorporation.
  • Keywords
    III-V semiconductors; deep levels; gallium arsenide; molecular beam epitaxial growth; semiconductor epitaxial layers; semiconductor growth; III-V semiconductors; MBE; carrier concentration; deep-level trap generation; defect generation; electron trap density; flux ratio; growth conditions; undoped GaAs layers;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19840116
  • Filename
    4249728
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1001295