Title :
Monolayer heterointerfaces and thin layers (~10 Ã\x85) in AlxGa1¿xAs-GaAs superlattices grown by metalorganic chemical vapour deposition
Author :
Brown, J.M. ; Holonyak, N. ; Ludowise, M.J. ; Dietze, W.T. ; Lewis, C.R.
Author_Institution :
University of Illinois at Urbana-Champaign, Electrical Engineering Research Laboratory and Materials Research Laboratory, Urbana, USA
Abstract :
Transmission electron microscopy (TEM) and lattice fringe images are used to show that metalorganic chemical vapour deposition (MOCVD) is capable of growing highly uniform AlxGa1¿xAs-GaAs quantum-well heterostructures (QWHs) and superlattices (SLs) with monolayer heterointerfaces and layers as thin as ~10 Å.
Keywords :
III-V semiconductors; aluminium compounds; chemical vapour deposition; crystal growth from vapour; gallium arsenide; semiconductor growth; semiconductor superlattices; transmission electron microscope examination of materials; AlxGa1-xAs-GaAs superlattices; MOCVD; QWHs; TEM; lattice fringe images; layer thickness 10 Angstrom; metalorganic chemical vapour deposition; monolayer heterointerfaces; quantum-well heterostructures; semiconductor growth; semiconductors; thin layers; transmission electron microscopy;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19840135
