1001627

Erratum: Enhancement-mode metal/(Al,Ga)As/GaAs buried-interface field-effect transistor (BIFET)

Drummond, T.J. ; Kopp, W. ; Arnold, Dorian ; Fischer, Ray ; Morko¿¿, H. ; Erickson, L.P. ; Palmberg, P.W.

20

5

1984

224

III-V semiconductors; aluminium compounds; gallium arsenide; insulated gate field effect transistors; Al0.5Ga0.5As; GaAs MISFET; III-V semiconductors; accumulation mode; buried-interface field-effect transistors; cryogenic temperatures; electron saturation velocity; enhancement mode; insulator layer; transconductance;

English

Electronics Letters

iet

0013-5194

jour

10.1049/el:19840149

4249762