• DocumentCode
    1001682
  • Title

    Boundary element method for calculation of depletion layer profiles

  • Author

    Cuypers, F. ; De Mey, G.

  • Author_Institution
    Ghent State University, Laboratory of Electronics, Gent, Belgium
  • Volume
    20
  • Issue
    6
  • fYear
    1984
  • Firstpage
    229
  • Lastpage
    230
  • Abstract
    A numerical method is presented to calculate the two-dimensional potential distribution in a semiconductor according to the abrupt depletion approximation. The technique is based on the boundary element method, and the shape of the depletion region is determined iteratively.
  • Keywords
    boundary-elements methods; semiconductor junctions; semiconductors; surface potential; abrupt depletion approximation; boundary element method; depletion layer profiles; numerical method; semiconductor; semiconductor junctions; two-dimensional potential distribution;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19840154
  • Filename
    4249768
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1001682