Title :
Corrections to “Growth of Lanthanum Manganate Buffer Layers for Coated Conductors via a Metal–Organic Decomposition Process”
Author :
Venkataraman, Kartik ; Hellstrom, Eric E. ; Paranthaman, Mariappan
Author_Institution :
Lam Res. Corp., Fremont, CA
Abstract :
In our prior paper, we reported forming (110)-oriented LaMnO3 on a biaxially textured Ni-3at%W substrate. Chemical analysis of these films subsequent to publishing the paper showed only La and O-there was no Mn present in the film. The film was actually (400)-oriented La2O3 with the cubic bixbyite structure. Subsequent studies also showed that MnO film is not stable on Ni and Ni-W substrate surfaces at 1100 degC and PO2 = 10-16 atm where bulk MnO is stable.
Keywords :
buffer layers; chemical analysis; decomposition; lanthanum compounds; nickel alloys; tungsten alloys; LaMnO3-NiW; NiW; biaxially textured substrate; buffer layer growth; chemical analysis; coated conductors; cubic bixbyite structure; metal-organic decomposition process; pressure 0.0000000000000010 atm; temperature 1100 C;
Journal_Title :
Applied Superconductivity, IEEE Transactions on
DOI :
10.1109/TASC.2008.2007235
