Low-resistance submicrometer contacts to silicon

Author

Wright, Peter J. ; Loh, William M. ; Saraswat, Krishna C.

Author_Institution

Center for Integrated Syst., Stanford Univ., CA, USA

Volume

35

Issue

8

fYear

1988

fDate

8/1/1988 12:00:00 AM

Firstpage

1328

Lastpage

1333

Abstract

The fabrication of submicrometer contacts of Al, PtSi, TiN, and CVD W to both arsenic- and boron-doped junctions using e-beam lithography and photolithography in a mix-and-match mode is described. The contact resistances obtained indicate that this will not be a major barrier for future ULSI scaling. The measured resistance values are compared to those obtained using a 2-D model and the discrepancies are discussed. A generalized scaling law for electromigration at contacts is also developed by taking into account the current distribution in the contact area

Keywords

VLSI; aluminium; contact resistance; integrated circuit technology; ohmic contacts; platinum compounds; semiconductor-metal boundaries; titanium compounds; tungsten; Al-Si; PtSi; PtSi-Si; Si:As; Si:B; TiN-Si; ULSI scaling; W-Si; contact area; contact resistances; current distribution; e-beam lithography; electromigration at contacts; fabrication of submicrometer contacts; mix-and-match mode; photolithography; scaling law; Annealing; Boron; Electrical resistance measurement; Electromigration; Implants; Lithography; Resists; Silicon; Tin; Ultra large scale integration;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.2555

Filename

2555