Title :
Room-temperature pulsed operation of GaxIn1¿xAsyP1¿y/Gax´In1¿x´Asy´P1¿y´ DH visible injection laser grown on (100) GaAs by a two-phase-solution technique
Author :
Kawanishi, H. ; Aota, Tomoyuki ; Iwakami, Tetsuro
Author_Institution :
Kogakuin University, Department of Electronic Engineering, Tokyo, Japan
Abstract :
Room-temperature pulsed operation of a GaxIn1¿xAsyP1¿y/Gax´In1¿x´Asy´P1¿y´ double-heterostructure visible injection laser diode is reported. The laser diode is grown by liquid-phase epitaxy on (100) GaAs, and the active layer is grown by a two-phase-solution technique. The threshold current density is 16 kA/cm2 for the laser diode lasing at about 721 nm at room temperature.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; semiconductor epitaxial layers; semiconductor junction lasers; (100) GaAs; GaxIn1-xAsyP1-y/Ga x´In1-x´Asy´P1- -y´; III-V semiconductors; double-heterostructure visible injection laser diode; information processing; information storage systems; liquid-phase epitaxy; room temperature pulsed operation; threshold current density; two-phase-solution technique;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19840176
