Title :
Characterization of an amorphous GexSi1-xOy microbolometer for thermal imaging applications
Author :
Ahmed, A.H.Z. ; Tait, R.Niall
Author_Institution :
Dept. of Electron., Carleton Univ., Ottawa, Ont., Canada
Abstract :
A self-absorbing, self-supported microbolometer was fabricated using CMOS compatible surface micromachining technology. A high resistivity a-GexSi1-xOy resistor layer was suspended using an electrically conductive nichrome link. Prototype device fabrication and characterization indicates these devices may be suitable for application to commercial thermal imaging cameras. Detectivity of 6.7×108cm√Hz/W, responsivity of 1×105 V/W, and thermal time constant of 13 ms were measured and a NETD value of 190 mK was calculated.
Keywords :
CMOS integrated circuits; amorphous semiconductors; bolometers; germanium compounds; infrared imaging; micromachining; resistors; 13 ms; 190 mK; CMOS compatible surface micromachining technology; NETD value; a-GexSi1-xOy resistor layer; amorphous materials; electrically conductive nichrome link; germanium compounds; infrared imaging; microbolometer; thermal imaging camera; thermal time constant; Amorphous materials; Amorphous semiconductors; Bolometers; Conducting materials; Fabrication; Infrared detectors; Micromachining; Optical imaging; Semiconductor materials; Thermal conductivity; Amorphous materials; bolometers; germanium compounds; infrared imaging;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2005.852545
