Title :
Pulsed and CW high temperature operation of InGaAs/GaAs strained layer vertical cavity surface emitting lasers
Author :
Von Lehmen, Ann ; Banwell, T. ; Carrion, L. ; Stoffel, N. ; Florez, L. ; Harbison, J.
Author_Institution :
Bellcore, Red Bank, NJ, USA
Abstract :
The performance of strained layer InGaAs/GaAs vertical cavity surface emitting lasers defined by ion implantation over a approximately 75 degrees C temperature range is reported on. Maximum CW output levels for the temperature extremes of 10 and 86 degrees C are 7.5 MW and 200 mu W, respectively for 20*20 mu m2 devices. The temperature dependence of the CW threshold current exhibits exponential behaviour to 80 degrees C.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; laser cavity resonators; semiconductor junction lasers; 10 to 86 degC; 200 muW to 7.5 mW; CW output levels; CW threshold current; InGaAs-GaAs; high temperature operation; ion implantation; pulsed operation; semiconductor lasers; strained layer; surface emitting lasers; temperature dependence; vertical cavity;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19920013
