Title :
1.5< lambda <1.7 mu m strained multiquantum well InGaAs/InGaAsP diode lasers
Author :
Bour, D.P. ; Martinelli, R.U. ; Enstrom, R.E. ; Stewart, T.R. ; DiGiuseppe, N.G. ; Hawrylo, F.Z. ; Cooper, D.B.
Author_Institution :
David Sarnoff Res. Center, Princeton, NJ, USA
Abstract :
The long wavelength limitations of strained In0.7Ga0.3As/InGaAsP four-quantum well (QW) lasers are investigated. For this confining structure and QW composition, wavelengths range from 1.52 to 1.72 mu m for QW thicknesses between 33 and 70 AA, and there is an optimum QW thickness of approximately 40 AA.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; semiconductor junction lasers; semiconductor quantum wells; 1.5 to 1.7 micron; 33 to 70 AA; InGaAs-InGaAsP; QW thicknesses; confining structure; diode lasers; four-quantum well; strained multiquantum well;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19920023
