Title :
Improved CW operation of GaAs-based QC lasers: Tmax= 150 K
Author :
Page, Hideaki ; Dhillon, Sukhdeep ; Calligaro, Michel ; Becker, Cyrille ; Ortiz, Valentin ; Sirtori, Carlo
Author_Institution :
Thales Res. & Technol., Orsay, France
fDate :
6/1/2004 12:00:00 AM
Abstract :
We present a substantial improvement in the CW performance of GaAs-based quantum cascade lasers with operation up to 150 K. This has been achieved through suitable changes in device processing of a well-characterized laser. The technology optimizes the current injection in the laser by reducing the size of the active stripe whilst maintaining a strong coupling of the optical mode to preserve low current densities. The reduction of total dissipated power is critical for these lasers to operate CW. At 77 K, the maximum CW optical power is 80 mW, threshold current is 470 mA, slope efficiency is 141 mW/A, and lasing wavelength λ∼10.3 μm.
Keywords :
III-V semiconductors; gallium arsenide; laser modes; optical couplers; quantum cascade lasers; 150 K; 470 mA; 77 K; 80 mW; GaAs; GaAs-based quantum cascade lasers; continuous-wave operation; current densities; current injection; laser thermal devices; optical mode; quantum thermal factors; semiconductor lasers; Gallium arsenide; Heating; Laser modes; Laser transitions; Power lasers; Quantum cascade lasers; Quantum well lasers; Temperature; Thermal resistance; Threshold current; Laser thermal devices; quantum thermal factors; semiconductor lasers;
Journal_Title :
Quantum Electronics, IEEE Journal of
DOI :
10.1109/JQE.2004.828259