Title :
Metal-semiconductor-metal photodetector using Fe-implanted In0.53Ga0.47As
Author :
Rao, Mulpuri V. ; Gulwadi, S.M. ; Hong, Woo-Pyo ; Caneau, Catherine ; Chang, G.K. ; Papanicolaou, N.C.
Author_Institution :
Dept. of Electr. & Comput. Eng., George Mason Univ., Fairfax, VA, USA
Abstract :
A two finger interdigitated metal-semiconductor-metal detector has been made using high-resistance Fe-implanted In0.53Ga0.47As material grown on InP:Fe. The fingers are 30 mu m long with 1 mu m width and 1.5 mu m separation. The breakdown voltage of the device is 5V. At 2 V bias, the device has a dark current of 250 nA and a DC responsivity of 0.375 A/W at 1.3 mu m. The full width at half maximum of the response of the detector at 1.3 mu m is 260 ps.
Keywords :
III-V semiconductors; electric breakdown of solids; gallium arsenide; indium compounds; iron; metal-semiconductor-metal structures; photodetectors; 1 micron; 1.3 micron; 250 nA; 260 ps; 30 micron; 5 V; DC responsivity; In 0.53Ga 0.47As:Fe; InP:Fe; breakdown voltage; dark current; two finger interdigitated metal-semiconductor-metal detector;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19920028
