• DocumentCode
    1002776
  • Title

    Enhancement of effective Schottky barrier height on n-type InP

  • Author

    Ho, M.C. ; He, Yuhong ; Chin, T.P. ; Tu, C.W.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., California Univ., San Diego, La Jolla, CA, USA
  • Volume
    28
  • Issue
    1
  • fYear
    1992
  • Firstpage
    68
  • Lastpage
    71
  • Abstract
    The effective Schottky barrier height on n-type InP is increased by a thin heavily-doped p-type surface layer grown by gas-source molecular beam epitaxy. The relationships between the barrier height increment and the doping level and thickness of the surface layer have been studied. The Schottky diodes fabricated by this method show reasonably low leakage current at high reverse bias and high reverse breakdown voltage.
  • Keywords
    III-V semiconductors; Schottky effect; Schottky-barrier diodes; indium compounds; semiconductor doping; semiconductor-metal boundaries; InP; MBE; Schottky diodes; barrier height increment; breakdown voltage; doping level; effective Schottky barrier height; gas-source molecular beam epitaxy; heavily-doped layer; low leakage current; n-type; p-type surface layer;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19920043
  • Filename
    255929
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1002776