• DocumentCode
    1002865
  • Title

    Reactive ion etched GaAs optical waveguide modulators with low loss and high speed

  • Author

    Buchmann, Peter ; Kaufmann, H. ; Melchior, H. ; Guekos, G.

  • Author_Institution
    Swiss Federal Institute of Technology, Zurich, Switzerland
  • Volume
    20
  • Issue
    7
  • fYear
    1984
  • Firstpage
    295
  • Lastpage
    297
  • Abstract
    Single-mode rib waveguides and modulators for operation at 1.3 ¿m have been fabricated by reactive ion etching (RIE). The antireflection-coated devices show very low coupling and propagation loss (2 dB/cm) and are suitable as extracavity digital modulators in the Gbit/s range for single-mode system applications.
  • Keywords
    III-V semiconductors; gallium arsenide; losses; modulators; optical waveguides; reactive sputtering; 1.3 ¿m; GaAs optical waveguide modulators; Gbit/s range; III-V semiconductor; antireflection-coated devices; extra-cavity digital modulators; loss; propagation loss; reactive ion etching; single-mode rib waveguides;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19840202
  • Filename
    4250490
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1002865