DocumentCode
1003148
Title
Reducing VBE wafer spread of bipolar transistor via a compensation circuit
Author
Amador, R. ; Polanco, A. ; Hernandez, H. ; Gonzalez, E. ; Nagy, Akos
Author_Institution
Inst. Superior Politecnico, Habana, Cuba
Volume
28
Issue
15
fYear
1992
fDate
7/16/1992 12:00:00 AM
Firstpage
1378
Lastpage
1379
Abstract
A circuit which reduces the VBE wafer spread of a standard bipolar transistor in linear ICs is described. This compensation circuit takes advantage of the close correlation between Is and beta r. The spread of VBE is the major source of output error in IC temperature sensors with intrinsic reference, which thereby require resistive trimming.
Keywords
Monte Carlo methods; bipolar integrated circuits; bipolar transistors; compensation; electric sensing devices; linear integrated circuits; temperature measurement; IC temperature sensors; Monte Carlo simulation; V BE wafer spread; bipolar transistor; compensation circuit; linear ICs; output error;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19920876
Filename
256023
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