Title :
Enhanced exciton absorption in quantum-confined Stark effect of [110]-oriented InGaAsP quantum wells
Author :
Oe, Katsutoshi ; Wakita, Ken ; Bhat, Ritesh ; Koza, M.A.
Author_Institution :
Opto-Electron. Labs., Kanagawa, Japan
fDate :
7/16/1992 12:00:00 AM
Abstract :
A new phenomenon of the quantum-confined Stark effect has been found in InGaAsP quantum wells grown on [110]InP substrates by MOVPE. Enhanced exciton absorption concurrent with the applied voltage is observed for the first time.
Keywords :
III-V semiconductors; Stark effect; electroabsorption; excitons; gallium arsenide; gallium compounds; indium compounds; infrared spectra of inorganic solids; semiconductor quantum wells; InGaAsP quantum wells; InP substrate; MOVPE; MQW; [110] orientation; enhanced exciton absorption; photocurrent spectra; quantum-confined Stark effect;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19920884
