• DocumentCode
    1003396
  • Title

    Numerical analysis of MOS transistor effective channel width

  • Author

    Asenov, A.M. ; Stefanov, Evgueniy N. ; Antov, B.Z.

  • Author_Institution
    Institute of Microelectronics, Sofia, Bulgaria
  • Volume
    21
  • Issue
    14
  • fYear
    1985
  • Firstpage
    595
  • Lastpage
    597
  • Abstract
    The effect of modulation of the effective width of a narrow-channel MOST by the gate voltage is demonstrated using a two-dimensional integral MOS process and device similator. The realistic shapes of the `bird´s beak¿ and doping concentrations allow a numerical analysis of this effect to be made for typical enhancement- and depletion-mode devices, as well as a comparison with the experiment.
  • Keywords
    insulated gate field effect transistors; numerical analysis; semiconductor device models; 2-D simulation; MOS transistor effective channel width; bird´s beak shape; channel width modulation; depletion-mode devices; doping profile shape; enhancement mode devices; gate voltage; models; narrow-channel MOST; numerical analysis; numerical methods;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19850420
  • Filename
    4250606
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1003396