Title :
Electrostatic capacitances in standard and pseudomorphic ultrashort gate length HEMTs
Author :
Yazbek, Khaled ; de Lustrac, Andre ; Jin, Yichao ; Aniel, F. ; Crozat, P. ; Adde, R. ; Vernet, G.
Author_Institution :
Univ. Paris Sud, Orsay, France
Abstract :
HEMT electrostatic capacitances are determined with a 2D finite element solver according to the device geometry. The calculation is compared with measurements on recessed ultrasubmicrometre rectangular gate and T-gate pseudomorphic and standard HEMTs on GaAs.
Keywords :
capacitance; finite element analysis; high electron mobility transistors; semiconductor device models; 2D finite element solver; AlGaAs-GaAs; AlGaAs-InGaAs-GaAs; FEA; HEMTs; device geometry; electrostatic capacitances; pseudomorphic devices; standard devices; ultrashort gate length;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19921133
