• DocumentCode
    1004352
  • Title

    Novel fabrication process for Si3N4 passivated InAlAs/InGaAs/InP HFETs

  • Author

    Dickmann, Juergen ; Riepe, K. ; Haspeklo, H. ; Maile, B. ; Daembkes, H. ; Nickel, H. ; Losch, R. ; Schlapp, W.

  • Author_Institution
    Daimler Benz Res. Center, Ulm, Germany
  • Volume
    28
  • Issue
    19
  • fYear
    1992
  • Firstpage
    1849
  • Lastpage
    1850
  • Abstract
    The process technology of fully passivated T-shaped 0.18 mu m gate length InAlAs/InGaAs/InP HFETs is described. Using material selective etchants, devices realised with this process yielded gate breakdown voltages in excess of 8 V and drain source breakdown voltages in excess of 5 V. The excellent gate characteristics lead to a noise figure of 0.75 dB at 18 GHz with 13 dB associated gain. The extrapolated maximum frequency of oscillation was determined to be fmax=290 GHz.
  • Keywords
    III-V semiconductors; aluminium compounds; electric breakdown of solids; gallium arsenide; high electron mobility transistors; indium compounds; passivation; semiconductor technology; silicon compounds; solid-state microwave devices; 0.18 micron; 13 dB; 18 GHz; 290 GHz; 5 V; 8 V; EHF; InAlAs-InGaAs-InP; MM-wave operation; SHF; Si 3N 4; Si 3N 4 passivation; T-shaped gates; drain source breakdown voltages; fabrication process; gate breakdown voltages; material selective etchants; process technology;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19921179
  • Filename
    256136
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1004352