DocumentCode
1004354
Title
Effect of nonlinear gain on the bandwidth of semiconductor lasers
Author
Olshansky, R. ; Fye, D.M. ; Manning, John ; Su, C.B.
Author_Institution
GTE Laboratories Incorporated, Optoelectronic Devices, Waltham, USA
Volume
21
Issue
17
fYear
1985
Firstpage
721
Lastpage
722
Abstract
The effect of nonlinear gain on the frequency response of semiconductor lasers at high bias powers is analysed using the multimode rate equations. In spite of the strong damping of the relaxation oscillations due to nonlinear gain, bandwidths of over 40 GHz appear to be attainable in semiconductor lasers.
Keywords
laser theory; optical modulation; semiconductor junction lasers; bandwidth; frequency response; high bias powers; multimode rate equations; nonlinear gain; relaxation oscillations; semiconductor lasers; small signal modulation;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19850509
Filename
4250718
Link To Document