• DocumentCode
    1004957
  • Title

    Hot-electron noise limitations in submillimetre-wave Schottky-barrier mixer diodes

  • Author

    Keen, N.J.

  • Author_Institution
    Max-Planck-Institut fÿr Radioastronomie, Bonn, West Germany
  • Volume
    21
  • Issue
    1
  • fYear
    1985
  • Firstpage
    2
  • Lastpage
    3
  • Abstract
    The noise from small-area platinum gallium-arsenide Schottky-barrier mixer diodes has been measured at 4 GHz, to compare high-field (hot-electron) noise in diodes with different doping densities and anode areas. In the present state of technology, submillmmetre-wavelength mixer diodes should be fabricated from gallium arsenide with a doping density of about 1017 cm¿3.
  • Keywords
    Schottky-barrier diodes; electron device noise; hot carriers; mixers (circuits); solid-state microwave devices; 4 GHz; Pt-GaAs diodes; anode areas; doping densities; hot electron noise; submillimetre-wave Schottky-barrier mixer diodes;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19850002
  • Filename
    4250800
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1004957