Title :
Hot-electron noise limitations in submillimetre-wave Schottky-barrier mixer diodes
Author_Institution :
Max-Planck-Institut fÿr Radioastronomie, Bonn, West Germany
Abstract :
The noise from small-area platinum gallium-arsenide Schottky-barrier mixer diodes has been measured at 4 GHz, to compare high-field (hot-electron) noise in diodes with different doping densities and anode areas. In the present state of technology, submillmmetre-wavelength mixer diodes should be fabricated from gallium arsenide with a doping density of about 1017 cm¿3.
Keywords :
Schottky-barrier diodes; electron device noise; hot carriers; mixers (circuits); solid-state microwave devices; 4 GHz; Pt-GaAs diodes; anode areas; doping densities; hot electron noise; submillimetre-wave Schottky-barrier mixer diodes;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19850002
