• DocumentCode
    1005563
  • Title

    Fabrication of widegap-emitter Schottky-collector transistor using GaInAs/InP

  • Author

    Emeis, N. ; Beneking, H.

  • Author_Institution
    Aachen Technical University, Institute of Semiconductor Electronics, Aachen, West Germany
  • Volume
    21
  • Issue
    3
  • fYear
    1985
  • Firstpage
    85
  • Abstract
    A widegap-emitter transistor with a Schottky collector has been fabricated using n-InP as the emitter, p-GaInAs as the base layer and Ni as the Schottky metallisation. The fabricated transistors show a current gain better than 5 in the common-emitter configuration.
  • Keywords
    III-V semiconductors; Schottky effect; bipolar transistors; gallium arsenide; indium compounds; GaInAs/InP Schottky collector transistor; Ni; Schottky metallisation; bipolar transistor; common-emitter configuration; current gain; n-InP; p-GaInAs; widegap-emitter transistor;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19850058
  • Filename
    4250867
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1005563